dmp4015spsq document number: ds36681 rev. 2 - 2 1 of 6 www.diodes.com december 2013 ? diodes incorporated dmp4015spsq new product powerdi is a registered trademark of diodes incorporated 40v p-channel enhanc ement mode mosfet powerdi ? product summary v (br)dss r ds(on) max i d t a = +25c -40v 11m ? @ v gs = -10v -17.0a 15m ? @ v gs = -4.5v -14.5a description this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. applications ? dc-dc converters ? power management functions ? analog switch features and benefits ? 100% unclamped inductive switch (uis) test in production ? low on-resistance ? fast switching speed ? lead-free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability ? ppap available mechanical data ? case: powerdi ? 5060-8 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? 100% matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.097 grams (approximate) ordering information (note 4 & 5) part number compliance case packaging dmp4015spsq-13 automotive powerdi ? 5060-8 2,500 / tape & reel notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (roh s 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. automotive products are aec-q101 qualified and are ppap capabl e. automotive, aec-q101 and standard products are electrically and thermally the same, except where specified. for more information, pl ease refer to http://www.diodes.c om/quality/product_grade_definitions /. 5. for packaging details, go to our website at http://www.diodes.com/p roducts/packages.html. marking information top view bottom view internal schematic top view pin configuration s d d g d d s s pin1 ? green d s g s g d s d d d s p4015sp yy ww = manufacturer?s marking p4015sp = product type marking code yyww = date code marking yy = year (ex: 13 = 2013) ww = week (01 - 53)
dmp4015spsq document number: ds36681 rev. 2 - 2 2 of 6 www.diodes.com december 2013 ? diodes incorporated dmp4015spsq new product powerdi is a registered trademark of diodes incorporated maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss -40 v gate-source voltage v gss 25 v continuous drain current (note 6) v gs = -10v steady state t a = +25c t a = +70c i d -8.5 -6.8 a t<10s t a = +25c t a = +70c i d -13.0 -10.5 a continuous drain current (note 7) v gs = -10v steady state t a = +25c t a = +70c i d -11.0 -8.7 a t<10s t a = +25c t a = +70c i d -17.0 -13.5 a pulsed drain current (10 s pulse, duty cycle = 1%) i dm -100 a maximum body diode continuous current (note 7) i s -3.5 a avalanche current (note 8) i as -22 a avalanche energy (note 8) e as 242 mj thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 6) t a = +25c p d 1.3 w t a = +70c 0.8 thermal resistance, junction to ambient (note 6) steady state r ja 96.4 c/w t<10s 40.6 c/w total power dissipation (note 7) t a = +25c p d 2.1 w t a = +70c 1.4 thermal resistance, junction to ambient (note 7) steady state r ja 55.0 c/w t<10s 24.0 c/w thermal resistance, junction to case (note 7) r jc 4.15 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 9) drain-source breakdown voltage bv dss -40 ? ? v v gs = 0v, i d = -250 a zero gate voltage drain current i dss ? ? -1 a v ds = -40v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 25v, v ds = 0v on characteristics (note 9) gate threshold voltage v gs ( th ) -1.5 -2 -2.5 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) ? 7 11 ? v gs = -10v, i d = -9.8a ? 9 15 v gs = -4.5v, i d = -9.8a forward transfer admittance |y fs | ? 26 ? s v ds = -20v, i d = -9.8a diode forward voltage v sd ? -0.7 -1 v v gs = 0v, i s = -1a dynamic characteristics (note 10) input capacitance c iss ? 4234 ? pf v ds = -20v, v gs = 0v f = 1mhz output capacitance c oss ? 1036 ? reverse transfer capacitance c rss ? 526 ? gate resistance r g ? 7.77 ? ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge q g ? 47.5 ? nc v ds = -20v, v gs = -5v i d = -9.8a gate-source charge q g s ? 14.2 ? gate-drain charge q g d ? 13.5 ? turn-on delay time t d ( on ) ? 13.2 ? ns v gs = -10v, v dd = -20v, r g = 6 ? , i d = -1a, r l = 20 ? turn-on rise time t r ? 10 ? turn-off delay time t d ( off ) ? 302.7 ? turn-off fall time t f ? 137.9 ? notes: 6. device mounted on fr-4 pc board, with minimum recommended pad layout, single sided. 7. device mounted on fr-4 substrate pc board, 2oz copper, wi th thermal bias to bottom layer 1inch square copper plate 8. uis in production with l = 0.1mh, tj = +25c 9 .short duration pulse test used to minimize self-heating effect. 10. guaranteed by design. not subject to production testing.
dmp4015spsq document number: ds36681 rev. 2 - 2 3 of 6 www.diodes.com december 2013 ? diodes incorporated dmp4015spsq new product powerdi is a registered trademark of diodes incorporated -v , drain -source voltage(v) fig. 1 typical output characteristics ds -i , d r ain c u r r en t (a) d 0 5 10 15 20 25 30 0 0.5 1 1.5 2 -v =10v gs -v =4.5v gs -v =4.0v gs -v =3.5v gs -v =3.0v gs -i , drain current (a) d 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 10 15 20 25 30 -v , gate-source voltage (v) gs fig. 2 typical transfer characteristics -i , drain source current fig. 3 typical on-resistance vs. drain current and gate voltage d r ,d r ain-s o u r ce o n- r esistance( ) ds(on) 0 0.005 0.01 0.015 0.02 0 5 10 15 20 25 30 -i , drain source current (a) fig. 4 typical on-resistance vs. drain current and temperature d r , drain-s o urce o n-resistance( ) ds(on) 0 0.005 0.01 0.015 0.02 0 5 10 15 20 25 30 -v = 4.5v gs t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j fig. 5 on-resistance variation with temperature r , drain-source on-resistance (normalized) ds(on) 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j fig. 6 on-resistance variation with temperature r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) v = 10v i=10a gs d -v = 4.5v -i = 5.0a gs d 0 0.004 0.008 0.012 0.016 0.02
dmp4015spsq document number: ds36681 rev. 2 - 2 4 of 6 www.diodes.com december 2013 ? diodes incorporated dmp4015spsq new product powerdi is a registered trademark of diodes incorporated -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) fig. 7 gate threshold variation vs. ambient temperature a -v , gate threshold voltage (v) gs(th) 0 0.4 0.8 1.2 1.6 2 2.4 -i , source current (a) s -v , source-drain voltage (v) fig. 8 diode forward voltage vs. current sd 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 15 20 25 30 v , drain-source voltage (v) fig. 9 typical junction capacitance ds c , j u n c t i o n c a p a c i t a n c e (p f ) t c iss c oss c rss 10 100 1000 0 5 10 15 20 25 30 f = 1mhz -v , drain-source voltage(v) fig. 10 typical drain-source leakage current vs. voltage ds -i , leaka g e c u r r en t (na) dss 0.1 1 10 100 1000 10000 0 5 10 15 20 25 30 t =150c a t =125c a t =85c a t =25c a 0 2 4 6 8 10 q , total gate charge (nc) fig. 11 gate-charge characteristics g v , gate-source voltage (v) gs 020406080100120 0.2 0.4 0.6 0.8 1.0 inductor (mh) fig. 12 single-pulse avalanche tested 0 10 20 30 40 50 60 70 80 90 i,avalan c he c u r r ent (a) as 0 100 200 300 400 500 600 e, avala n c h e e n e r g y (mj) as e as i as 0.1 0.3 0.5 0.7 0.9 starting temperature (t ) = 25c j
dmp4015spsq document number: ds36681 rev. 2 - 2 5 of 6 www.diodes.com december 2013 ? diodes incorporated dmp4015spsq new product powerdi is a registered trademark of diodes incorporated package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. 0.001 0.01 0.1 1 10 100 1,000 fig. 13 transient thermal response t , pulse duration time (s) 1 t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 97c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5 dut mounted on fr-4 pcb with minimum recommended pad layout 0.001 0.01 0.1 r(t), t r ansien t t h e r mal r esis t an c e 1 powerdi5060-8 dim min max typ a 0.90 1.10 1.00 a1 0.00 0.05 ? b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 d 5.15 bsc d1 4.70 5.10 4.90 d2 3.70 4.10 3.90 d3 3.90 4.30 4.10 e 6.15 bsc e1 5.60 6.00 5.80 e2 3.28 3.68 3.48 e3 3.99 4.39 4.19 e 1.27 bsc g 0.51 0.71 0.61 k 0.51 ? ? l 0.51 0.71 0.61 l1 0.050 0.20 0.175 m 3.235 4.035 3.635 m1 1.00 1.40 1.21 10o 12o 11o 1 6o 8o 7o all dimensions in mm d1 e1 a l k m l1 d2 g e2 detail a o (4x) a1 c e d e 1 detail a b (8x) e/2 1 o (4x) m1 b2 (4x) b3 (4x) e3 d3
dmp4015spsq document number: ds36681 rev. 2 - 2 6 of 6 www.diodes.com december 2013 ? diodes incorporated dmp4015spsq new product powerdi is a registered trademark of diodes incorporated suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com dimensions value (in mm) c 1.270 g 0.660 g1 0.820 x 0.610 x1 4.100 x2 0.755 x3 4.420 x4 5.610 y 1.270 y1 0.600 y2 1.020 y3 0.295 y4 1.825 y5 3.810 y6 0.180 y7 6.610 y 7 x 3 y 2 y 5 x 1 g 1 x c y 4 x g x 2 y 3 y 4 y 6 x 4 y 1
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